Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier
نویسندگان
چکیده
Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It found that reactive RF sputtering O2 essential to obtain strong perpendicular anisotropy and large tunneling magnetoresistance in MgAl2O4-based junctions. An interfacial energy density of 2.25 mJ/m2 obtained for the samples annealed at 400C. enhanced 60% has also been achieved. The Vhalf, bias voltage which drops half zero-bias value, be about 1V, substantially higher than MgO-based
منابع مشابه
Enhanced tunneling magnetoresistance and perpendicular magnetic anisotropy in Mo/CoFeB/MgO magnetic tunnel junctions
Articles you may be interested in Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction Appl. Large enhanced perpendicular magnetic anisotropy in CoFeB/MgO system with the typical Ta buffer replaced by an Hf layer
متن کاملStrain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions
While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic ...
متن کاملHeusler compounds with perpendicular magnetic anisotropy and large tunneling magnetoresistance
In the present work we suggest a recipe for finding tetragonal Heusler compounds with perpendicular magnetic anisotropy (PMA) that also exhibit large tunneling magnetoresistance (TMR) when used as electrodes in magnetic tunnel junction devices with suitable tunneling barrier materials. We performed density-functional theory calculations for 286 Heusler compounds and identified 116 stable tetrag...
متن کاملAnisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions
The effects of the spin-orbit coupling SOC on the tunneling magnetoresistance of ferromagnet/ semiconductor/normal-metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance TAMR are derived within an approximation in which the dependence of the magnetoresistance on the magnetization orientation in the ferromagnet originates from the interfer...
متن کاملAnnealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer
MgO-based magnetic tunnel junctions were fabricated, with a thin pinned CoFeB layer in the unbalanced synthetic antiferromagnet part of the stack FeMn/CoFe/Ru/CoFeB. Inverted and normal tunneling magnetoresistance (TMR) values occur at low and high annealing temperatures (Ta), respectively. The TMR ratio remains inverted up to Ta = 300 °C and it becomes normal around Ta = 350 °C. The exchange b...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Magnetism and Magnetic Materials
سال: 2022
ISSN: ['0304-8853', '1873-4766']
DOI: https://doi.org/10.1016/j.jmmm.2022.169914